The IXTY2R4N50P is a surface mount N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 55W and a drain to source breakdown voltage of 500V. The device features a continuous drain current of 2.4A and a gate to source voltage of 30V. It is lead free and RoHS compliant, packaged in a TO-252-3 package.
PackageTO-252-3
Current Rating2A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Ixys IXTY2R4N50P technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 2.4A |
| Current Rating | 2A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 3.75R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 240pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 55W |
| Mount | Surface Mount |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 55W |
| Rds On Max | 3.75R |
| RoHS Compliant | Yes |
| Series | PolarHV™ |
| Turn-Off Delay Time | 65ns |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTY2R4N50P Datasheet
Download the complete datasheet for Ixys IXTY2R4N50P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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