The IXTY3N50P is a high-voltage N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 500V and a continuous drain current of 3.6A. The device is packaged in a TO-252AA surface mount package and is lead free. It is RoHS compliant and suitable for use in high-power applications.
PackageTO-252AA
Current Rating3A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Ixys IXTY3N50P technical specifications.
General
| Package/Case | TO-252AA |
| Continuous Drain Current (ID) | 3.6A |
| Current Rating | 3A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 2R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 409pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Surface Mount |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 70W |
| Rds On Max | 2R |
| RoHS Compliant | Yes |
| Series | PolarHV™ |
| Turn-Off Delay Time | 38ns |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTY3N50P Datasheet
Download the complete datasheet for Ixys IXTY3N50P to view detailed technical specifications.
No datasheet is available for this part.
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