N-Channel Power MOSFET, 600V Drain-Source Breakdown Voltage, 3A Continuous Drain Current, and 2.9 Ohm Max Drain-Source On-Resistance. Features include a 70W Max Power Dissipation, 150°C Max Operating Temperature, and surface mount TO-252-3 package. This silicon Metal-oxide Semiconductor FET offers a 411pF Input Capacitance and fast switching with a 22ns Fall Time and 58ns Turn-Off Delay Time. RoHS compliant and lead-free.
PackageTO-252-3
Current Rating3A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Ixys IXTY3N60P technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 3A |
| Current Rating | 3A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 2.9R |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 2.9R |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 411pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Surface Mount |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 70W |
| Rds On Max | 2.9R |
| RoHS Compliant | Yes |
| Series | PolarHV™ |
| Turn-Off Delay Time | 58ns |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTY3N60P Datasheet
Download the complete datasheet for Ixys IXTY3N60P to view detailed technical specifications.
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