The IXTY5N50P is a N-CHANNEL MOSFET with a Drain to Source Breakdown Voltage of 500V and a Continuous Drain Current of 4.8A. It has a maximum power dissipation of 89W and is packaged in a TO-252 plastic package. The device operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations. It features a low Rds On Max of 1.4R and a fast fall time of 24ns.
PackageTO-252
MountingSurface Mount
PolarityN-CHANNEL
Power89W
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Technical Specifications
Ixys IXTY5N50P technical specifications.
General
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 4.8A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 1.4R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 620pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 89W |
| Mount | Surface Mount |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 89W |
| Rds On Max | 1.4R |
| RoHS Compliant | Yes |
| Series | PolarHV™ |
| Turn-Off Delay Time | 65ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTY5N50P Datasheet
Download the complete datasheet for Ixys IXTY5N50P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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