IXTY64N055T

Name: IXTY64N055T Ixys
Brand: Ixys
SKU: IXTY64N055T

Power Field-Effect Transistor, 64A I(D), 55V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 2 PIN

PackageTO-252

MountingSurface Mount

PolarityN-CHANNEL

Power130W

Quick Jump:

Ixys IXTY64N055T technical specifications.

Package/Case	TO-252
Continuous Drain Current (ID)	64A
Drain to Source Breakdown Voltage	55V
Drain to Source Resistance	13mR
Drain to Source Voltage (Vdss)	55V
Fall Time	30ns
Input Capacitance	1.42nF
Lead Free	Lead Free
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	130W
Mount	Surface Mount
Package Quantity	75
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	130W
Rds On Max	13mR
RoHS Compliant	Yes
Series	TrenchMV™
Turn-Off Delay Time	37ns

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.