The IXXH30N60C3D1 is an insulated gate bipolar transistor from Ixys with a collector-emitter breakdown voltage of 600V and a maximum collector current of 60A. It has a maximum power dissipation of 270W and is packaged in a TO-247-3 case for through-hole mounting. The device is RoHS compliant and features a reverse recovery time of 25ns. It is part of the GenX3 and XPT series of transistors.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Ixys IXXH30N60C3D1 technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector-emitter Voltage-Max | 2.3V |
| Input Type | STANDARD |
| Max Collector Current | 60A |
| Max Power Dissipation | 270W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 25ns |
| RoHS Compliant | Yes |
| Series | GenX3™, XPT™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXXH30N60C3D1 Datasheet
Download the complete datasheet for Ixys IXXH30N60C3D1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.