The IXXH75N60B3D1 is a 600V insulated gate bipolar transistor with a maximum collector current of 160A and a maximum power dissipation of 750W. It is packaged in a TO-247-3 case and is mounted through a hole. The device is RoHS compliant and has a reverse recovery time of 25ns. It is available in a rail or tube packaging with 30 units per package.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Ixys IXXH75N60B3D1 technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector-emitter Voltage-Max | 1.85V |
| Input Type | STANDARD |
| Max Collector Current | 160A |
| Max Power Dissipation | 750W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 25ns |
| RoHS Compliant | Yes |
| Series | GenX3™, XPT™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXXH75N60B3D1 Datasheet
Download the complete datasheet for Ixys IXXH75N60B3D1 to view detailed technical specifications.
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