The IXXK100N60B3H1 is a high-power insulated gate bipolar transistor from Ixys, packaged in a TO-264 case and available in quantities of 25. It features a collector-emitter breakdown voltage of 600V and a saturation voltage of 1.8V. The transistor can handle a maximum collector current of 200A and a maximum power dissipation of 695W. It operates within a temperature range of -55°C to 150°C and is compliant with RoHS regulations. The transistor has a reverse recovery time of 140ns.
PackageTO-264
MountingThrough Hole
Power695W
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Technical Specifications
Ixys IXXK100N60B3H1 technical specifications.
General
| Package/Case | TO-264 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.8V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 1.8V |
| Input Type | STANDARD |
| Max Collector Current | 200A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 695W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Power Dissipation | 695W |
| Reverse Recovery Time | 140ns |
| RoHS Compliant | Yes |
| Series | GenX3™, XPT™ |
| Weight | 0.35274oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXXK100N60B3H1 Datasheet
Download the complete datasheet for Ixys IXXK100N60B3H1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.