The IXXK110N65B4H1 is a 650V insulated gate bipolar transistor with a maximum collector current of 240A. It is packaged in a TO-264-3 case and is designed for through-hole mounting. The device operates over a temperature range of -55°C to 175°C and is compliant with RoHS regulations. With a maximum power dissipation of 880W, this IGBT is suitable for high-power applications.
PackageTO-264-3
MountingThrough Hole
Power880W
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Technical Specifications
Ixys IXXK110N65B4H1 technical specifications.
General
| Package/Case | TO-264-3 |
| Collector Emitter Breakdown Voltage | 650V |
| Collector Emitter Saturation Voltage | 1.75V |
| Collector-emitter Voltage-Max | 2.1V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 240A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 880W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Power Dissipation | 880W |
| Reverse Recovery Time | 100ns |
| RoHS Compliant | Yes |
| Series | GenX4™, XPT™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXXK110N65B4H1 Datasheet
Download the complete datasheet for Ixys IXXK110N65B4H1 to view detailed technical specifications.
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