The IXXK200N60B3 is a 600V insulated gate bipolar transistor with a maximum collector current of 380A. It is packaged in a TO-264-3 case and is designed for through hole mounting. The device is RoHS compliant and has a maximum operating temperature of 175°C, with a minimum operating temperature of -55°C. The IGBT is suitable for high-power applications, with a maximum power dissipation of 1.63kW.
PackageTO-264-3
MountingThrough Hole
Power1.63kW
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Technical Specifications
Ixys IXXK200N60B3 technical specifications.
General
| Package/Case | TO-264-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.4V |
| Collector-emitter Voltage-Max | 1.7V |
| Input Type | STANDARD |
| Max Collector Current | 380A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.63kW |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Power Dissipation | 1.63kW |
| RoHS Compliant | Yes |
| Series | XPT™, GenX3™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXXK200N60B3 Datasheet
Download the complete datasheet for Ixys IXXK200N60B3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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