The IXXK200N60C3 is a 600V insulated gate bipolar transistor (IGBT) packaged in a TO-264-3 through hole package. It can handle a maximum collector current of 340A and has a maximum power dissipation of 1.63kW. The device is RoHS compliant and operates within a temperature range of -55°C to 175°C.
PackageTO-264-3
MountingThrough Hole
Power1.63kW
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Technical Specifications
Ixys IXXK200N60C3 technical specifications.
General
| Package/Case | TO-264-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.6V |
| Collector-emitter Voltage-Max | 2.1V |
| Input Type | STANDARD |
| Max Collector Current | 340A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.63kW |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Power Dissipation | 1.63kW |
| RoHS Compliant | Yes |
| Series | XPT™, GenX3™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXXK200N60C3 Datasheet
Download the complete datasheet for Ixys IXXK200N60C3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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