High-performance Insulated Gate Bipolar Transistor (IGBT) featuring a 650V Collector-Emitter Breakdown Voltage and a maximum continuous Collector Current of 210A. This device offers a low Collector-Emitter Saturation Voltage of 1.98V and a maximum power dissipation of 750W, suitable for demanding applications. Designed for chassis mounting in a SOT-227-4 package, it operates across a wide temperature range from -55°C to 175°C. Key switching characteristics include a 35ns turn-on delay and a 143ns turn-off delay, with an input capacitance of 3.69nF. This lead-free and RoHS compliant component is part of the XPT™, GenX4™ series.
PackageSOT-227-4
MountingChassis Mount
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Technical Specifications
Ixys IXXN110N65C4H1 technical specifications.
General
| Package/Case | SOT-227-4 |
| Collector Emitter Breakdown Voltage | 650V |
| Collector Emitter Saturation Voltage | 1.98V |
| Collector-emitter Voltage-Max | 2.35V |
| Input | Standard |
| Input Capacitance | 3.69nF |
| Lead Free | Lead Free |
| Max Collector Current | 210A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 750W |
| Mount | Chassis Mount |
| NTC Thermistor | No |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Series | XPT™, GenX4™ |
| Turn-Off Delay Time | 143ns |
| Turn-On Delay Time | 35ns |
| Weight | 1.340411oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXXN110N65C4H1 Datasheet
Download the complete datasheet for Ixys IXXN110N65C4H1 to view detailed technical specifications.
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