The IXYS IGBT is a high-power insulated gate bipolar transistor with a collector-emitter breakdown voltage of 650V and a maximum collector current of 290A. It features a TO-247-3 package and is designed for through-hole mounting. The device operates within a temperature range of -55°C to 175°C and has a maximum power dissipation of 940W. The IXYS IGBT is RoHS compliant and part of the GenX4 and XPT series.
PackageTO-247-3
MountingThrough Hole
Power940W
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Technical Specifications
Ixys IXXX160N65C4 technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 650V |
| Collector Emitter Saturation Voltage | 1.7V |
| Collector-emitter Voltage-Max | 2.1V |
| Input Type | STANDARD |
| Max Collector Current | 290A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 940W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 940W |
| RoHS Compliant | Yes |
| Series | GenX4™, XPT™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXXX160N65C4 Datasheet
Download the complete datasheet for Ixys IXXX160N65C4 to view detailed technical specifications.
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