N-Channel Insulated Gate Bipolar Transistor (IGBT) featuring a 650V Collector-Emitter Breakdown Voltage and a maximum Collector Current of 370A. This through-hole mounted component offers a low Collector-Emitter Voltage (Vce(sat)) of 1.7V and a high maximum power dissipation of 1.15kW. Designed for operation across a wide temperature range from -55°C to 175°C, it is packaged in a TO-247-3 case and is RoHS compliant.
PackageTO-247-3
MountingThrough Hole
Power1.15kW
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Technical Specifications
Ixys IXXX200N65B4 technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 650V |
| Collector-emitter Voltage-Max | 1.7V |
| Input Type | STANDARD |
| Max Collector Current | 370A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.15kW |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 1.15kW |
| RoHS Compliant | Yes |
| Series | GenX4™, XPT™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXXX200N65B4 Datasheet
Download the complete datasheet for Ixys IXXX200N65B4 to view detailed technical specifications.
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