N-Channel Insulated Gate Bipolar Transistor (IGBT) featuring a 600V Collector-Emitter Breakdown Voltage and a maximum collector current of 550A. This device offers a low Collector-Emitter Saturation Voltage of 1.3V and a maximum power dissipation of 2.3kW. Designed for through-hole mounting in a TO-247-3 package, it operates across a wide temperature range from -55°C to 175°C. RoHS compliant and suitable for demanding applications.
PackageTO-247-3
MountingThrough Hole
Power2.3kW
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Technical Specifications
Ixys IXXX300N60B3 technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.3V |
| Collector-emitter Voltage-Max | 1.6V |
| Input Type | STANDARD |
| Max Collector Current | 550A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.3kW |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 2.3kW |
| RoHS Compliant | Yes |
| Series | GenX3™, XPT™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXXX300N60B3 Datasheet
Download the complete datasheet for Ixys IXXX300N60B3 to view detailed technical specifications.
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