The IXYB82N120C3H1 is a high-power insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 164A. It is packaged in a TO-264-3 case and is designed for through-hole mounting. The device operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.04kW. The IXYB82N120C3H1 is compliant with RoHS regulations and is available in a 25-piece package.
PackageTO-264-3
MountingThrough Hole
Power1.04kW
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Technical Specifications
Ixys IXYB82N120C3H1 technical specifications.
General
| Package/Case | TO-264-3 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.75V |
| Collector-emitter Voltage-Max | 3.2V |
| Height | 26.59mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 20.29mm |
| Max Collector Current | 164A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.04kW |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Power Dissipation | 1.04kW |
| Reverse Recovery Time | 420ns |
| RoHS Compliant | Yes |
| Series | GenX3™, XPT™ |
| Turn-Off Delay Time | 192ns |
| Turn-On Delay Time | 29ns |
| Width | 5.31mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXYB82N120C3H1 Datasheet
Download the complete datasheet for Ixys IXYB82N120C3H1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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