The IXYH20N65C3 is a 650V insulated gate bipolar transistor with a maximum collector current of 50A and a maximum power dissipation of 230W. It is packaged in a TO-247-3 package and is available in quantities of 30. The transistor is designed for through hole mounting and is part of the GenX3 and XPT series. It is suitable for use in a variety of applications including power conversion and motor control.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Ixys IXYH20N65C3 technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 650V |
| Collector-emitter Voltage-Max | 2.5V |
| Input Type | STANDARD |
| Max Collector Current | 50A |
| Max Power Dissipation | 230W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Series | GenX3™, XPT™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXYH20N65C3 Datasheet
Download the complete datasheet for Ixys IXYH20N65C3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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