The IXYH30N65C3 is an insulated gate bipolar transistor from Ixys, featuring a collector-emitter breakdown voltage of 650V and a maximum collector current of 60A. It has a maximum power dissipation of 270W and is packaged in a TO-247-3 case, suitable for through-hole mounting. The transistor is part of the GenX3 and XPT series, with a packaging quantity of 30 units per rail or tube.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Ixys IXYH30N65C3 technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 650V |
| Collector-emitter Voltage-Max | 2.7V |
| Input Type | STANDARD |
| Max Collector Current | 60A |
| Max Power Dissipation | 270W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Series | GenX3™, XPT™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXYH30N65C3 Datasheet
Download the complete datasheet for Ixys IXYH30N65C3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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