The IXYJ20N120C3D1 is a 1.2kV insulated gate bipolar transistor with a maximum collector current of 21A and a maximum power dissipation of 105W. It is packaged in a TO-247-3 case and is designed for through-hole mounting. The transistor has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It is compliant with RoHS regulations and is part of the GenX3 and XPT series.
PackageTO-247-3
MountingThrough Hole
Power105W
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Technical Specifications
Ixys IXYJ20N120C3D1 technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 4V |
| Collector-emitter Voltage-Max | 3.4V |
| Height | 21.34mm |
| Input Type | STANDARD |
| Length | 16.13mm |
| Max Collector Current | 21A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 105W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 105W |
| Reverse Recovery Time | 195ns |
| RoHS Compliant | Yes |
| Series | GenX3™, XPT™ |
| Width | 5.21mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXYJ20N120C3D1 Datasheet
Download the complete datasheet for Ixys IXYJ20N120C3D1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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