N-Channel Insulated Gate Bipolar Transistor (IGBT) featuring a 900V Collector-Emitter Breakdown Voltage and a maximum Collector Current of 310A. This device offers a low Collector-Emitter Voltage (Vce(sat)) of 2.7V and a high Power Dissipation of 1.63kW. Designed for through-hole mounting in a TO-264-3 package, it is RoHS compliant and lead-free.
PackageTO-264-3
MountingThrough Hole
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Technical Specifications
Ixys IXYK140N90C3 technical specifications.
General
| Package/Case | TO-264-3 |
| Collector Emitter Breakdown Voltage | 900V |
| Collector-emitter Voltage-Max | 2.7V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 310A |
| Max Power Dissipation | 1.63kW |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Series | GenX3™, XPT™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXYK140N90C3 Datasheet
Download the complete datasheet for Ixys IXYK140N90C3 to view detailed technical specifications.
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