N-channel Insulated Gate Bipolar Transistor (IGBT) featuring a 1200V collector-emitter breakdown voltage and a maximum collector current of 134A. This IGBT offers a low collector-emitter saturation voltage of 2.9V and a maximum power dissipation of 690W. Designed for chassis mount, surface mount, and screw mounting, it operates within a temperature range of -55°C to 150°C. The component is RoHS compliant and lead-free, packaged in SOT-227-4 with a turn-on delay time of 32ns and turn-off delay time of 123ns.
PackageSOT-227-4
MountingChassis Mount, Surface Mount, Screw
Power690W
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Technical Specifications
Ixys IXYN100N120C3H1 technical specifications.
General
| Package/Case | SOT-227-4 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.9V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 3.5V |
| Height | 9.6mm |
| Input | Standard |
| Input Capacitance | 6nF |
| Lead Free | Lead Free |
| Length | 38.23mm |
| Max Collector Current | 134A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 690W |
| Mount | Chassis Mount, Surface Mount, Screw |
| NTC Thermistor | No |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Power Dissipation | 690W |
| RoHS Compliant | Yes |
| Series | XPT™, GenX3™ |
| Turn-Off Delay Time | 123ns |
| Turn-On Delay Time | 32ns |
| Width | 25.07mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXYN100N120C3H1 Datasheet
Download the complete datasheet for Ixys IXYN100N120C3H1 to view detailed technical specifications.
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