The IXYN82N120C3 is a 1.2kV insulated gate bipolar transistor with a maximum collector current of 120A and a maximum power dissipation of 500W. It is packaged in a SOT-227-4 case and is suitable for surface mount applications. The device operates over a temperature range of -55°C to 175°C and is compliant with the RoHS directive. The IXYN82N120C3 is part of the XPT and GenX3 series from Ixys.
PackageSOT-227-4
MountingChassis Mount, Surface Mount
Power600W
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Technical Specifications
Ixys IXYN82N120C3 technical specifications.
General
| Package/Case | SOT-227-4 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.75V |
| Collector-emitter Voltage-Max | 3.2V |
| Height | 9.6mm |
| Input | Standard |
| Input Capacitance | 4.1nF |
| Lead Free | Lead Free |
| Length | 38.23mm |
| Max Collector Current | 120A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500W |
| Mount | Chassis Mount, Surface Mount |
| NTC Thermistor | No |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Power Dissipation | 600W |
| RoHS Compliant | Yes |
| Series | XPT™, GenX3™ |
| Turn-Off Delay Time | 192ns |
| Turn-On Delay Time | 29ns |
| Width | 25.07mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXYN82N120C3 Datasheet
Download the complete datasheet for Ixys IXYN82N120C3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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