
The IXYX140N90C3 is a 900V insulated gate bipolar transistor with a maximum collector current of 310A. It is packaged in a TO-247-3 case and is designed for through hole mounting. The device is lead free and RoHS compliant. The transistor is rated for a maximum power dissipation of 1.63kW and has a collector-emitter breakdown voltage of 900V. It is suitable for use in high-power applications where a high current and high voltage are required.
Ixys IXYX140N90C3 technical specifications.
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 900V |
| Collector-emitter Voltage-Max | 2.7V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 310A |
| Max Power Dissipation | 1.63kW |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Series | GenX3™, XPT™ |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXYX140N90C3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
