Ixys
IXZR08N120A
RF Power Field-Effect Transistor, 1-Element, Silicon, N-Channel, Metal-oxide Semiconductor FET, ISOPLUS 247, 3 PIN
Resistance2.1R
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Technical Specifications
Ixys IXZR08N120A technical specifications.
General
| Continuous Drain Current (ID) | 8A |
| Drain to Source Voltage (Vdss) | 1.2kV |
| Max Operating Temperature | 175°C |
| Max Power Dissipation | 250W |
| Reach SVHC Compliant | No |
| Resistance | 2.1R |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXZR08N120A Datasheet
Download the complete datasheet for Ixys IXZR08N120A to view detailed technical specifications.
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