The Ixys MIAA15WB600TMH is a 600V insulated gate bipolar transistor (IGBT) module designed for three phase bridge rectifier applications. It features a maximum collector current of 23A and a maximum power dissipation of 80W. The module is packaged in a module case and is mounted to a chassis. It operates over a temperature range of -40°C to 125°C and is compliant with RoHS regulations. An NTC thermistor is integrated into the module for temperature sensing.
PackageModule
MountingChassis Mount
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Technical Specifications
Ixys MIAA15WB600TMH technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Input | Three Phase Bridge Rectifier |
| Input Capacitance | 700pF |
| Max Collector Current | 23A |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 80W |
| Mount | Chassis Mount |
| NTC Thermistor | Yes |
| Package Quantity | 20 |
| Packaging | Box |
| Reverse Voltage | 1.6kV |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Ixys MIAA15WB600TMH Datasheet
Download the complete datasheet for Ixys MIAA15WB600TMH to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.