N-channel Insulated Gate Bipolar Transistor (IGBT) module featuring a 1.2kV collector-emitter breakdown voltage and a maximum collector current of 270A. This IGBT module offers a low collector-emitter saturation voltage of 2.2V and a maximum power dissipation of 1.13kW. Designed for chassis or panel mounting with screw terminals, it operates within a temperature range of -40°C to 150°C. The module has a turn-on delay time of 100ns and a turn-off delay time of 650ns.
PackageModule
MountingChassis Mount, Panel, Screw
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Technical Specifications
Ixys MID200-12A4 technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.2V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.7V |
| Height | 30mm |
| Input | Standard |
| Input Capacitance | 11nF |
| Lead Free | Lead Free |
| Length | 110mm |
| Max Collector Current | 270A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 1.13kW |
| Mount | Chassis Mount, Panel, Screw |
| NTC Thermistor | No |
| Package Quantity | 2 |
| Packaging | Box |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 650ns |
| Turn-On Delay Time | 100ns |
| Width | 62mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys MID200-12A4 Datasheet
Download the complete datasheet for Ixys MID200-12A4 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.