N-channel Insulated Gate Bipolar Transistor (IGBT) featuring a 1.2kV Collector-Emitter Breakdown Voltage and a 135A continuous collector current. This component offers a maximum collector-emitter voltage of 2.7V and a low saturation voltage of 2.2V. Designed for chassis or panel mounting with screw terminals, it operates within a temperature range of -40°C to 150°C and boasts a maximum power dissipation of 560W. Key electrical characteristics include a 100ns turn-on delay and a 650ns turn-off delay.
PackageY
Current Rating135A
MountingChassis Mount, Panel, Screw
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Technical Specifications
Ixys MII100-12A3 technical specifications.
General
Package/Case
Y
Collector Emitter Breakdown Voltage
1.2kV
Collector Emitter Saturation Voltage
2.2V
Collector Emitter Voltage (VCEO)
1.2kV
Collector-emitter Voltage-Max
2.7V
Current Rating
135A
Height
30mm
Input
Standard
Input Capacitance
5.5nF
Lead Free
Lead Free
Length
94mm
Max Collector Current
135A
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
560W
Mount
Chassis Mount, Panel, Screw
NTC Thermistor
No
Package Quantity
6
Packaging
Bulk
Reach SVHC Compliant
No
Reverse Voltage
1.2kV
RoHS Compliant
Yes
Turn-Off Delay Time
650ns
Turn-On Delay Time
100ns
DC Rated Voltage
1.2kV
Width
34mm
Compliance
RoHS
Compliant
Datasheet
Ixys MII100-12A3 Datasheet
Download the complete datasheet for Ixys MII100-12A3 to view detailed technical specifications.
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