N-channel Insulated Gate Bipolar Transistor (IGBT) featuring a 1.2kV Collector-Emitter Breakdown Voltage and a 135A continuous collector current. This component offers a maximum collector-emitter voltage of 2.7V and a low saturation voltage of 2.2V. Designed for chassis or panel mounting with screw terminals, it operates within a temperature range of -40°C to 150°C and boasts a maximum power dissipation of 560W. Key electrical characteristics include a 100ns turn-on delay and a 650ns turn-off delay.
PackageY
Current Rating135A
MountingChassis Mount, Panel, Screw
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Technical Specifications
Ixys MII100-12A3 technical specifications.
General
| Package/Case | Y |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.2V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.7V |
| Current Rating | 135A |
| Height | 30mm |
| Input | Standard |
| Input Capacitance | 5.5nF |
| Lead Free | Lead Free |
| Length | 94mm |
| Max Collector Current | 135A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 560W |
| Mount | Chassis Mount, Panel, Screw |
| NTC Thermistor | No |
| Package Quantity | 6 |
| Packaging | Bulk |
| Reach SVHC Compliant | No |
| Reverse Voltage | 1.2kV |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 650ns |
| Turn-On Delay Time | 100ns |
| DC Rated Voltage | 1.2kV |
| Width | 34mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys MII100-12A3 Datasheet
Download the complete datasheet for Ixys MII100-12A3 to view detailed technical specifications.
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