N-Channel Silicon Metal-Oxide Semiconductor FET with a 75V drain-source voltage and 500A continuous drain current. This single-element power field-effect transistor features a low on-resistance of 0.0016 ohms. It is housed in a 21-terminal plastic package and operates up to a maximum temperature of 150°C.
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Technical Specifications
Ixys MMIX1F520N075T2 technical specifications.
General
Max Operating Temperature
150
Number of Terminals
21
Terminal Position
DUAL
Pin Count
21
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
Lead Free
Yes
REACH
Compliant
Military Spec
False
Datasheet
Ixys MMIX1F520N075T2 Datasheet
Download the complete datasheet for Ixys MMIX1F520N075T2 to view detailed technical specifications.
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