The Ixys MUBW15-12A7 is a three phase bridge rectifier insulated gate bipolar transistor with a collector emitter breakdown voltage of 1.2kV and a maximum collector current of 35A. It has a maximum operating temperature of 125°C and a minimum operating temperature of -40°C. The device is packaged in a chassis mount configuration and is RoHS compliant. The IGBT features a maximum power dissipation of 180W and a reverse voltage of 1.6kV.
PackageE
MountingChassis Mount
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Technical Specifications
Ixys MUBW15-12A7 technical specifications.
General
| Package/Case | E |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector-emitter Voltage-Max | 2.6V |
| Input | Three Phase Bridge Rectifier |
| Input Capacitance | 1nF |
| Lead Free | Lead Free |
| Max Collector Current | 35A |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 180W |
| Mount | Chassis Mount |
| NTC Thermistor | Yes |
| Package Quantity | 6 |
| Packaging | Box |
| Reverse Voltage | 1.6kV |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Ixys MUBW15-12A7 Datasheet
Download the complete datasheet for Ixys MUBW15-12A7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.