The Ixys MWI150-12T8T is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a maximum collector-emitter voltage of 2.1V. It can handle a maximum collector current of 215A and has a maximum power dissipation of 690W. The transistor is packaged in an E3-PACK, SIXPACK-35 package and is suitable for chassis mount applications. It operates over a temperature range of -40°C to 125°C and is compliant with RoHS regulations.
PackageE
MountingChassis Mount
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Technical Specifications
Ixys MWI150-12T8T technical specifications.
General
| Package/Case | E |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector-emitter Voltage-Max | 2.1V |
| Input | Standard |
| Input Capacitance | 10.77nF |
| Lead Free | Lead Free |
| Max Collector Current | 215A |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 690W |
| Mount | Chassis Mount |
| NTC Thermistor | Yes |
| Package Quantity | 5 |
| Packaging | Box |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Ixys MWI150-12T8T Datasheet
Download the complete datasheet for Ixys MWI150-12T8T to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.