The Ixys MWI25-12A7 is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 50A. It has a maximum power dissipation of 225W and operates within a temperature range of -40°C to 125°C. The transistor is packaged in an E-package and is mounted via screw on a chassis. It is RoHS compliant and available in a box packaging with six transistors per package.
PackageE
MountingChassis Mount, Screw
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Technical Specifications
Ixys MWI25-12A7 technical specifications.
General
| Package/Case | E |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.7V |
| Input | Standard |
| Input Capacitance | 1.65nF |
| Max Collector Current | 50A |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 225W |
| Mount | Chassis Mount, Screw |
| NTC Thermistor | No |
| Package Quantity | 6 |
| Packaging | Box |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Ixys MWI25-12A7 Datasheet
Download the complete datasheet for Ixys MWI25-12A7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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