The MWI50-06A7T is a high-power insulated gate bipolar transistor (IGBT) module from Ixys. It features a collector-emitter breakdown voltage of 600V and a maximum collector current of 72A. The module is designed for chassis mount applications and can operate at temperatures up to 150°C. It is packaged in a MODULE-17 type package and is compliant with RoHS regulations.
PackageE
MountingChassis Mount, Screw
Quick Jump:
Technical Specifications
Ixys MWI50-06A7T technical specifications.
General
| Package/Case | E |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.4V |
| Input | Standard |
| Input Capacitance | 2.8nF |
| Max Collector Current | 72A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 225W |
| Mount | Chassis Mount, Screw |
| NTC Thermistor | Yes |
| Package Quantity | 6 |
| Packaging | Box |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Ixys MWI50-06A7T Datasheet
Download the complete datasheet for Ixys MWI50-06A7T to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
