Ixys
VMM85-02F
Power Field-Effect Transistor, 84A I(D), 200V, 0.02ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
MountingChassis Mount
PolarityN-CHANNEL
Power370W
Quick Jump:
Technical Specifications
Ixys VMM85-02F technical specifications.
General
Continuous Drain Current (ID)
84A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
25mR
Drain to Source Voltage (Vdss)
200V
Fall Time
100ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Input Capacitance
15nF
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
370W
Mount
Chassis Mount
Package Quantity
6
Packaging
Bulk
Polarity
N-CHANNEL
Power Dissipation
370W
Rds On Max
25mR
RoHS Compliant
Yes
Series
HiPerFET™
Turn-Off Delay Time
200ns
Compliance
RoHS
Compliant
Datasheet
Ixys VMM85-02F Datasheet
Download the complete datasheet for Ixys VMM85-02F to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
