N-Channel Power MOSFET Module featuring 100V drain-source voltage and 1.245kA continuous drain current. This silicon metal-oxide semiconductor FET offers a low on-resistance of 1.35mR at 1.220A. Designed for chassis mounting, it operates within a temperature range of -40°C to 150°C and is lead-free and RoHS compliant.
MountingChassis Mount
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Technical Specifications
Ixys VMO1200-01F technical specifications.
General
| Continuous Drain Current (ID) | 1.245kA |
| Drain to Source Voltage (Vdss) | 100V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Mount | Chassis Mount |
| Package Quantity | 2 |
| Packaging | Tray |
| Rds On Max | 1.35mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys VMO1200-01F Datasheet
Download the complete datasheet for Ixys VMO1200-01F to view detailed technical specifications.
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