N-Channel Power MOSFET Module featuring 200V drain-to-source breakdown voltage and 580A continuous drain current. This silicon Metal-Oxide-Semiconductor FET offers a low Rds On of 3.8mR. Designed for chassis mounting, it operates within a temperature range of -40°C to 150°C. Key switching parameters include a 500ns fall time and 900ns turn-off delay time, with a maximum gate-to-source voltage of 20V. This RoHS compliant, lead-free component is supplied in bulk packaging.
PackageModule
Current Rating580A
MountingChassis Mount
PolarityN-CHANNEL
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Technical Specifications
Ixys VMO580-02F technical specifications.
General
Package/Case
Module
Continuous Drain Current (ID)
580A
Current Rating
580A
Drain to Source Breakdown Voltage
200V
Drain to Source Voltage (Vdss)
200V
Fall Time
500ns
Gate to Source Voltage (Vgs)
20V
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Mount
Chassis Mount
Package Quantity
2
Packaging
Bulk
Polarity
N-CHANNEL
Rds On Max
3.8mR
RoHS Compliant
Yes
Series
HiPerFET™
Turn-Off Delay Time
900ns
DC Rated Voltage
200V
Compliance
RoHS
Compliant
Datasheet
Ixys VMO580-02F Datasheet
Download the complete datasheet for Ixys VMO580-02F to view detailed technical specifications.
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