N-channel, enhancement-mode, silicon JFET designed for small-signal amplification. Features low on-resistance and high input impedance, suitable for general-purpose switching and amplification applications. Operates with a drain-source voltage up to 60V and continuous drain current up to 200mA. Offers a low gate-source cutoff voltage and a low gate leakage current.
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Technical Specifications
Jiangsu Changjiang Electronics Technology 2N7002KW technical specifications.
Compliance
| REACH | unknown |
| Military Spec | False |
Datasheet
Jiangsu Changjiang Electronics Technology 2N7002KW Datasheet
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