The MB85RS4MTYPF-G-BCE1 is a Ferroelectric Random Access Memory (FRAM) chip in a configuration of 524,288 words x 8 bits. It utilizes the ferroelectric process and silicon gate CMOS process technologies for forming non-volatile memory cells. It adopts the Serial Peripheral Interface (SPI) and is capable of retaining data without a back-up battery, offering high endurance of 10^13 read/write cycles.
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| Memory Size | 4Mbit |
| Memory Organization | 512K x 8Words x Bits |
| Clock Frequency | 50MHz |
| Supply Voltage | 1.8 - 3.6V |
| Operating Temperature | -40 to +125°C |
| Endurance | 10^13Cycles |
| Interface | SPI |
| Operating Current | 2.6mA |
| RoHS | ROHS3 Compliant |
Download the complete datasheet for Kaga Electronics MB85RS4MTYPF-G-BCE1 to view detailed technical specifications.
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