The KDS114E is a silicon mixer diode with a minimum breakdown voltage of 35V and a maximum power dissipation of 0.1W. It has a 2-pin package type of R-PDSO-F2 and is designed for use in discrete semiconductor applications. The diode element material is silicon and the diode type is a mixer diode. The device has a maximum operating temperature of 150 degrees Celsius and is available from the KEC Group.
KEC Group KDS114E technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| Pin Count | 2 |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | MIXER DIODE |
| Breakdown Voltage-Min | 35 |
| Power Dissipation-Max | 0.1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.60 |
| REACH | unknown |
| Military Spec | False |
Download the complete datasheet for KEC Group KDS114E to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.