N-channel enhancement mode power MOSFET featuring 200V drain-source voltage and 19A continuous drain current. This single-element transistor is housed in a TO-220AB package with 3 pins and a tab, designed for through-hole mounting. Key specifications include a maximum drain-source resistance of 180 mOhm at 10V, typical gate charge of 35 nC, and a maximum power dissipation of 140W. Operating temperature range is -55°C to 150°C.
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
KEC Group KHB019N20P1 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220AB
Package Description
Transistor Outline Package
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.3(Max)
Package Width (mm)
4.7(Max)
Package Height (mm)
8.6(Max)
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-220AB
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
200V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
19A
Maximum Drain Source Resistance
180@10VmOhm
Typical Gate Charge @ Vgs
35@10VnC
Typical Gate Charge @ 10V
35nC
Typical Input Capacitance @ Vds
900@25VpF
Maximum Power Dissipation
140000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
7916F
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU
Datasheet
KEC Group KHB019N20P1 Datasheet
Download the complete datasheet for KEC Group KHB019N20P1 to view detailed technical specifications.
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