N-channel enhancement mode power MOSFET designed for through-hole mounting. Features a maximum drain-source voltage of 250V and a continuous drain current of 8.8A. Housed in a TO-220AB package with 3 pins and a tab, offering a maximum power dissipation of 74W. Operates across a temperature range of -55°C to 150°C, with a low drain-source on-resistance of 450mΩ at 10V.
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
KEC Group KHB8D8N25P technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220AB
Package Description
Transistor Outline Package
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.3(Max)
Package Width (mm)
4.7(Max)
Package Height (mm)
8.6(Max)
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-220AB
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
250V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
8.8A
Maximum Drain Source Resistance
450@10VmOhm
Typical Gate Charge @ Vgs
29.5@10VnC
Typical Gate Charge @ 10V
29.5nC
Typical Input Capacitance @ Vds
622@25VpF
Maximum Power Dissipation
74000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
7916F
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU
Datasheet
KEC Group KHB8D8N25P Datasheet
Download the complete datasheet for KEC Group KHB8D8N25P to view detailed technical specifications.
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