N-channel enhancement mode power MOSFET with a maximum drain-source voltage of 900V and continuous drain current of 9A. Features a TO-220IS(1) package with 3 pins and a tab, designed for through-hole mounting. Offers a low drain-source on-resistance of 1400mΩ at 10V and a maximum power dissipation of 68W. Operating temperature range is -55°C to 150°C.
PackageTO-220IS(1)
MountingThrough Hole
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Technical Specifications
KEC Group KHB9D0N90F1 technical specifications.
General
Package Family Name
TO-220
Package/Case
TO-220IS(1)
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.16
Package Width (mm)
4.7
Package Height (mm)
15.87
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
900V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
9A
Maximum Drain Source Resistance
1400@10VmOhm
Typical Gate Charge @ Vgs
75@10VnC
Typical Gate Charge @ 10V
75nC
Typical Input Capacitance @ Vds
2663@25VpF
Maximum Power Dissipation
68000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
7916F
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU
Datasheet
KEC Group KHB9D0N90F1 Datasheet
Download the complete datasheet for KEC Group KHB9D0N90F1 to view detailed technical specifications.
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