N-channel enhancement mode power MOSFET with a maximum drain-source voltage of 900V and continuous drain current of 9A. Features a TO-220IS(1) package with 3 pins and a tab, designed for through-hole mounting. Offers a low drain-source on-resistance of 1400mΩ at 10V and a maximum power dissipation of 68W. Operating temperature range is -55°C to 150°C.
PackageTO-220IS(1)
MountingThrough Hole
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Technical Specifications
KEC Group KHB9D0N90F1 technical specifications.
General
| Package Family Name | TO-220 |
| Package/Case | TO-220IS(1) |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.16 |
| Package Width (mm) | 4.7 |
| Package Height (mm) | 15.87 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 900V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 9A |
| Maximum Drain Source Resistance | 1400@10VmOhm |
| Typical Gate Charge @ Vgs | 75@10VnC |
| Typical Gate Charge @ 10V | 75nC |
| Typical Input Capacitance @ Vds | 2663@25VpF |
| Maximum Power Dissipation | 68000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 7916F |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU |
Datasheet
KEC Group KHB9D0N90F1 Datasheet
Download the complete datasheet for KEC Group KHB9D0N90F1 to view detailed technical specifications.
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