NPN Bipolar Junction Transistor (BJT) for through-hole mounting. Features a 60V collector-emitter voltage, 3A maximum DC collector current, and 2000mW power dissipation. Housed in a TO-220AB package with 3 pins and a tab, offering a 150 minimum DC current gain at 0.5A/5V. Operates across a temperature range of -55°C to 150°C.
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
KEC Group KTC2016GR technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220AB
Package Description
Transistor Outline Package
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.3(Max)
Package Width (mm)
4.7(Max)
Package Height (mm)
8.6(Max)
Seated Plane Height (mm)
15.3(Max)
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
60V
Maximum Emitter Base Voltage
7V
Maximum Collector-Emitter Voltage
60V
Maximum DC Collector Current
3A
Maximum Power Dissipation
2000mW
Minimum DC Current Gain
Maximum Transition Frequency
30(Typ)MHz
Category
Bipolar Power
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
7916F
EU RoHS
Yes
HTS Code
8541290075
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU
Datasheet
KEC Group KTC2016GR Datasheet
Download the complete datasheet for KEC Group KTC2016GR to view detailed technical specifications.
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