NPN Bipolar Junction Transistor (BJT) for general-purpose applications. Features a 30V collector-emitter voltage and 0.8A continuous collector current. This single-element transistor is housed in a 3-pin TO-92 plastic package with through-hole mounting. Key specifications include a maximum power dissipation of 625mW and a minimum DC current gain of 100 at 100mA and 1V. Operating temperature range is -40°C to 85°C.
PackageTO-92
MountingThrough Hole
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Technical Specifications
KEC Group KTC3203O technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-92
Package/Case
TO-92
Package Description
Plastic Header Style Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Package Length (mm)
4.8(Max)
Package Width (mm)
3.7(Max)
Package Height (mm)
4.7(Max)
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Through Hole
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
35V
Maximum Emitter Base Voltage
5V
Maximum Collector-Emitter Voltage
30V
Maximum DC Collector Current
0.8A
Maximum Power Dissipation
625mW
Minimum DC Current Gain
100@100mA@1V
Maximum Transition Frequency
120(Typ)MHz
Category
Bipolar Small Signal
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Compliance
Cage Code
7916F
EU RoHS
Yes
HTS Code
8541210075
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU
Datasheet
KEC Group KTC3203O Datasheet
Download the complete datasheet for KEC Group KTC3203O to view detailed technical specifications.
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