
Surface mount NPN phototransistor for infrared detection. Features a 2-pin SMD package with dimensions of 3mm x 2mm x 1mm. Operates within a temperature range of -40°C to 85°C, offering a maximum light current of 800µA (typ.) and a maximum collector-emitter voltage of 30V. This IR chip phototransistor has a maximum power dissipation of 100mW and a maximum dark current of 100nA.
Kingbright APECVA3010P3BT technical specifications.
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