Surface mount NPN phototransistor for infrared detection. Features a 2-pin SMD package with dimensions of 3mm x 2mm x 1mm. Operates within a temperature range of -40°C to 85°C, offering a maximum light current of 800µA (typ.) and a maximum collector-emitter voltage of 30V. This IR chip phototransistor has a maximum power dissipation of 100mW and a maximum dark current of 100nA.
PackageSMD
MountingSurface Mount
PolarityNPN
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Technical Specifications
Kingbright APECVA3010P3BT technical specifications.
General
Package/Case
SMD
Package Description
Surface Mount Device
Pin Count
2
PCB
2
Package Length (mm)
3
Package Width (mm)
2
Package Height (mm)
1
Mounting
Surface Mount
Phototransistor Type
Phototransistor
Type
IR Chip
Polarity
NPN
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Viewing Orientation
Top View
Maximum Light Current
800(Typ)uA
Lens Shape Type
Flat
Number of Channels per Chip
1
Fabrication Technology
NPN Transistor
Maximum Emitter-Collector Voltage
5V
Maximum Collector-Emitter Voltage
30V
Maximum Dark Current
100nA
Maximum Collector-Emitter Saturation Voltage
0.8V
Maximum Fall Time
15000(Typ)ns
Maximum Power Dissipation
100mW
Maximum Rise Time
15000(Typ)ns
Compliance
Cage Code
09MQ5
EU RoHS
Yes
HTS Code
8541407080
Schedule B
8541407080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Kingbright APECVA3010P3BT Datasheet
Download the complete datasheet for Kingbright APECVA3010P3BT to view detailed technical specifications.
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