Surface Mount NPN phototransistor for infrared detection, featuring a 940nm peak wavelength and a 2-pin SMT package. This IR chip phototransistor offers a maximum emitter-collector voltage of 5V and a maximum collector-emitter voltage of 30V, with a maximum dark current of 100 nA. Operating across a temperature range of -40°C to 85°C, it boasts a maximum light current of 1000µA (typ) and a maximum power dissipation of 100mW. The compact SMD package measures 2mm x 1.25mm x 0.75mm, designed for top-view viewing orientation.
PackageSMT
MountingSurface Mount
PolarityNPN
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Technical Specifications
Kingbright APT2012P3BT technical specifications.
General
Package Family Name
SMD
Package/Case
SMT
Package Description
Surface Mount Device
Pin Count
2
PCB
2
Package Length (mm)
2
Package Width (mm)
1.25
Package Height (mm)
0.75
Mounting
Surface Mount
Phototransistor Type
Phototransistor
Type
IR Chip
Polarity
NPN
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Viewing Orientation
Top View
Peak Wavelength
940nm
Maximum Light Current
1000(Typ)uA
Lens Shape Type
Flat
Number of Channels per Chip
1
Fabrication Technology
NPN Transistor
Lens Color
Blue Transparent
Maximum Emitter-Collector Voltage
5V
Maximum Collector-Emitter Voltage
30V
Maximum Dark Current
100nA
Maximum Collector-Emitter Saturation Voltage
0.8V
Maximum Fall Time
15000(Typ)ns
Maximum Power Dissipation
100mW
Maximum Rise Time
15000(Typ)ns
Compliance
Cage Code
09MQ5
EU RoHS
Yes
HTS Code
8541402000
Schedule B
8541402000
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Kingbright APT2012P3BT Datasheet
Download the complete datasheet for Kingbright APT2012P3BT to view detailed technical specifications.
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