NPN phototransistor chip, through-hole mounted, featuring a 2-pin configuration and a domed lens for top-view light detection. This component operates within a temperature range of -40°C to 85°C, with a maximum emitter-collector voltage of 5V and a maximum collector-emitter voltage of 30V. It offers a maximum light current of 1440 µA and a maximum collector current of 4.5 mA, with a low maximum dark current of 100 nA. Fabricated using NPN transistor technology, it has a maximum power dissipation of 100 mW.
MountingThrough Hole
PolarityNPN
Quick Jump:
Technical Specifications
Lite-On LTR-1550D technical specifications.
General
| Basic Package Type | Through Hole |
| Pin Count | 2 |
| PCB | 2 |
| Package Height (mm) | 4.45 |
| Package Diameter (mm) | 3.2 |
| Mounting | Through Hole |
| Phototransistor Type | Phototransistor |
| Type | Chip |
| Polarity | NPN |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 85°C |
| Viewing Orientation | Top View |
| Maximum Light Current | 1440uA |
| Lens Shape Type | Domed |
| Number of Channels per Chip | 1 |
| Fabrication Technology | NPN Transistor |
| Maximum Emitter-Collector Voltage | 5V |
| Maximum Collector-Emitter Voltage | 30V |
| Maximum Dark Current | 100nA |
| Maximum Collector Current | 4.5mA |
| Maximum Collector-Emitter Saturation Voltage | 0.4V |
| Maximum Fall Time | 10000(Typ)ns |
| Maximum Power Dissipation | 100mW |
| Maximum Rise Time | 10000(Typ)ns |
Compliance
| EU RoHS | Yes |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Lite-On LTR-1550D Datasheet
Download the complete datasheet for Lite-On LTR-1550D to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.