The 1N5635AB is a unidirectional silicon transient voltage suppressor diode with a breakdown voltage range of 11.4 to 12.6V and a maximum power dissipation of 1W. It features an axial 2-pin DO-13 package and is suitable for applications requiring transient voltage protection. The diode element material is silicon and the diode type is a trans voltage suppressor diode. The device is rated for a maximum non-repetitive peak reverse power dissipation of 1500W.
Littelfuse 1N5635AB technical specifications.
| Number of Terminals | 2 |
| Terminal Position | AXIAL |
| JEDEC Package Code | DO-13 |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Breakdown Voltage-Min | 11.4 |
| Non-rep Peak Rev Power Dis-Max | 1500 |
| Breakdown Voltage-Max | 12.6 |
| Power Dissipation-Max | 1 |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | unknown |
| Military Spec | False |
Download the complete datasheet for Littelfuse 1N5635AB to view detailed technical specifications.
No datasheet is available for this part.