The 1N6050B is a bidirectional silicon transient voltage suppressor diode with a breakdown voltage range of 27 to 33V and a maximum power dissipation of 1W. It features an axial package with a JEDEC code of DO-13 and a pin count of 2. The diode element material is silicon and the diode type is a transient voltage suppressor diode. The device is suitable for use in applications where transient voltage suppression is required.
PolarityBIDIRECTIONAL
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Technical Specifications
Littelfuse 1N6050B technical specifications.
General
| Number of Terminals | 2 |
| Terminal Position | AXIAL |
| JEDEC Package Code | DO-13 |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Breakdown Voltage-Min | 27 |
| Non-rep Peak Rev Power Dis-Max | 1500 |
| Breakdown Voltage-Max | 33 |
| Power Dissipation-Max | 1 |
Compliance
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Littelfuse 1N6050B Datasheet
Download the complete datasheet for Littelfuse 1N6050B to view detailed technical specifications.
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