The 1N6053T is a silicon bidirectional transient voltage suppressor diode with a breakdown voltage range of 35.1 to 42.9V and a maximum power dissipation of 1W. It has a DO-13 package and an axial terminal position. The diode element material is silicon and the diode type is a trans voltage suppressor diode. The device is suitable for use in applications where transient voltage suppression is required.
Littelfuse 1N6053T technical specifications.
| Number of Terminals | 2 |
| Terminal Position | AXIAL |
| JEDEC Package Code | DO-13 |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Breakdown Voltage-Min | 35.1 |
| Non-rep Peak Rev Power Dis-Max | 1500 |
| Breakdown Voltage-Max | 42.9 |
| Power Dissipation-Max | 1 |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | unknown |
| Military Spec | False |
Download the complete datasheet for Littelfuse 1N6053T to view detailed technical specifications.
No datasheet is available for this part.