Littelfuse
1N6059T
Silicon Bidirectional Transient Voltage Suppressor Diode 61.2V 74.8V 1W Axial DO-13
The 1N6059T is a silicon bidirectional transient voltage suppressor diode with a breakdown voltage range of 61.2V to 74.8V and a maximum power dissipation of 1W. It has a DO-13 axial package and is suitable for use in a variety of applications. The diode is made from silicon and has a maximum non-repetitive peak reverse power dissipation of 1500W. The 1N6059T is manufactured by Littelfuse and is a discrete semiconductor component.
PolarityBIDIRECTIONAL
Quick Jump:
Technical Specifications
Littelfuse 1N6059T technical specifications.
General
| Number of Terminals | 2 |
| Terminal Position | AXIAL |
| JEDEC Package Code | DO-13 |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Breakdown Voltage-Min | 61.2 |
| Non-rep Peak Rev Power Dis-Max | 1500 |
| Breakdown Voltage-Max | 74.8 |
| Power Dissipation-Max | 1 |
Compliance
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Littelfuse 1N6059T Datasheet
Download the complete datasheet for Littelfuse 1N6059T to view detailed technical specifications.
No datasheet is available for this part.